The 1st Sino-German Symposium on 'Electronic and Memory Materials'

 

11/01/2015 - 11/05/2015

The worldwide ascending demand for data storage has been one of the most important needs of the digital civilization. The flash storage should conserve more data in shorter time. This requires the development of new electronical materials. By holding a bilingual symposium between China and Germany new contacts and cooperation should develop. Leading scientists in the field of new electronic and memory have discuss on phase change materials, switching oxides and spintronics materials to lead to breakthroughs and challenges in fundamental research for future applications.

The 1st Sino-German Symposium on 'Electronic and Memory Materials' is

sponsored by

Chinesisch-Deutschen Zentrum 中德科学中心 ( Projekt GZ1243 )

organized by

RWTH Aachen University      
Xi'an Jiaotong University 西安交通大学
Forschungszentrum Jülich

supported by 

SFB917 Nanoswitches                      
CAMP-NANO 微纳中心
JARA-FIT
School of Materials Science and Engineering
Materials Science and Engineering - MatSE

  Programm of the symposium

Nov 1st 2015 Arrival and reception

Nov 2nd 2015 Scientific presentations and discussions

Time

Title

Speaker

Session Chair: Prof. Joachim Mayer

8:30-8:45

Opening remark

Prof. Matthias Wuttig Prof. Wei Zhang (张伟)

8:45-9:10

Spectroscopic proof of correlation of redox-state and charge-carrier transport at interface of resistive switching Ti/PCMO devices

Prof. Regina Dittmann   

9:10-9:35

Density functional theory guided advances in phase-change materials and memories

Prof. Wei Zhang (张伟)

9:35-10:00

Atomic-scale study of lattice defects in thin films of oxides

Prof. Chun-Lin Jia (贾春林)

10:00-10:30

Picture-taking, Coffee Break

Session Chair: Prof. Regina Dittmann

10:30-10:55

Tailoring phase change materials by stoichiometry and disorder

Prof. Matthias Wuttig

10:55-11:20

TEM microscopy study of crystallization kinetics in phase change materials

Prof. Joachim Mayer

11:20-11:45

The study of phase change compound Ti-Sb-Te

Prof. Zhi-Tang Song (宋志棠)

11:45-12:10

Ultrafast synaptic events in a chalcogenide memristor

Prof. Xiang-Shui Miao (缪向水)

12:10-13:30

Lunch

Session Chair: Prof. Chun-Lin Jia

13:30-13:55

Novel dielectric materials for passive integration and energy storage applications

Prof. Hong Wang (汪宏)

13:55-14:20

SrTiO3-based memristive devices where materials science meets psychology

Prof. Xin Guo (郭新)

14:20-14:45

Functions of electrical-induced resistive swtiching oxides

Prof. Ding-Hua Bao (包定华)

14:45-15:10

Improved performance in interface engineered ferroelectric and multiferroic tunnel junctions

Prof. Di Wu (吴迪)

15:10-15:35

Subnanometre-wide electron channels protected by topology

Prof. Markus Morgenstern

15:35-16:00

Coffee Break

Session Chair: Prof. Matthias Wuttig

16:25-16:50

In-situ TEM studies of colossal resistance effects and remanent switching in PrCaMnO films and heterostructures

Prof. Christian Joos

16:50-17:15

First-principles simulations of crystallization of phase-change materials

Prof. Riccardo Mazzarello

17:15-17:40

Shape without Structure: An Intriguing Formation Mechanism in the Solvothermal Synthesis of the PCM Sb2Te3

Prof. Ulrich Simon

17:40-18:05

Crystallization of phase-change materials driven by sub-picosecond eletrical and optical pulses

Dr. Peter Zalden

18:05-18:30

Amorphization of crystalline Si and GeTe under unixial strain

Prof. Zhi-Wei Shan (单智伟)

 

19:00

Conference Dinner

 

Nov 3rd 2015 Scientific presentations and discussions

 

Session Chair: Prof. Hongwang

 

8:30-8:55

The Status and Outlook of Spin-transfer torque magnetic random-access memory (STT-MRAM)

Prof. Tai Min (闵泰)

 

8:55-9:20

Nano-ring magnetic tunnel junctions and their potential application in STT-MRAM devices

Prof. Xiu-Feng Han (韩秀峰)

 

9:20-9:45

Graphene Based Novel Devices

Prof.Tian-Ling Ren (任天令)

 

9:45-10:10

Advances in Spintronics 4.0 : Spin-Orbitronics through first-principles theory

Prof. Stefan Blügel

 

10:10-10:40

Coffee Break

 

Session Chair: Prof. Riccardo Mazzarello

 

10:40-11:05

Fundamental ingredients to redox-based memristive phenomena

Prof. Rainer Waser

 

11:05-11:30

MOVPE and structural characteristics of trigonal phase change Ge1Sb2Te4

Dr. Hilde Hardtdegen

 

11:30-11:55

Drift in Amorphous Chalcogenides: Challenge and Opportunity for Novel Computing Architectures

Dr. Martin Salinga

 

11:55-12:20

Structural studies of Ge-Te alloys in liquid and glassy state

Dr. Ivan Kaban

 

12:20-14:00

Lunch

 

Session Chair: Prof. Stefan Blügel

 

14:00-14:25

Topological Insulating behavior in Phase-Change Superlattice

Prof. Zhi-Mei Sun (孙志梅)

 

14:25-14:50

Bonding nature of local structural motifs in amorphous phase change materials

Prof. Richard Dronskowski

 

14:50-15:15

Time-resolved X-ray scattering at FELs: New possibilities to study phase transitions

PD Klaus Sokolowski-Tinten

 

15:15-15:40

Ordered phase change materials grown by molecular beam epitaxy for memory applications

Dr. Raffaella Calarco

 

15:40-16:00

Coffee Break

 

Session Chair: Prof. Wei Zhang

 

16:00-16:25

Role of Electronic Excitation in the Amorphization of Ge-Sb-Te Alloys

Prof. Xian-bin Li (李贤斌)

 

16:25-16:50

Toward the complete relational graph of fundamental circuit elements

Prof. Da-Shan Shang (尚大山)

 

16:50-17:15

Phase-change materials under pressure

Dr. Ming Xu (徐明)

 

17:15-17:40

Atomistic simulation of magnetic materials and devices on nanoscale

Prof. Da-Wei Wang (王大威)

 

17:40-18:05

Atomic Structure and Chemistry of Fe doped SrTiO3 films

Dr. Hong-Chu Du (杜红初)

 

18:05-18:30

Closing Remark

Prof. Joachim Mayer Prof. Chun-Lin Jia (贾春林)

 

19:00

Dinner

 

Nov 4th 2015 Lab Tours and Free Discussions

 

Nov 5th 2015 Departure